View ma2s376 datasheet:

Variable Capacitance Diodes MA111 MA2S376 Silicon epitaxial planer type Unit : mm For UHF band wireless equipment VCO 0.15 min. 0.15 min. Features Small series resistance rD SS-Mini package, enabling down-sizing of the equipment and auto- matic insertion through taping 1.3± 0.1 1.7± 0.1 Absolute Maximum Ratings (Ta= 25?C) Parameter Symbol Rating Unit 1 : Anode Reverse voltage (DC) VR 6 V 2 : Cathode SS-Mini Type Package (2-pin) Junction temperature Tj 150 ?C Marking Symbol : H Storage temperature Tstg – 55 to +150 ?C Electrical Characteristics (Ta= 25?C) Parameter Symbol Condition min typ max Unit Reverse current (DC) IR VR= 6V 10 nA CD(1V) VR= 1V, f= 1MHz 14.00 16.00 pF Diode capacitance CD(3V) VR= 3V, f= 1MHz 6.80 8.90 pF Series resistance rD* CD= 9pF, f=