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ma786

Schottky Barrier Diodes (SBD) 2SK1606 MA786 Silicon epitaxial planer type +0.2 Unit : mm 2.8 –0.3 For super high-speed switching circuit +0.25 0.65± 0.15 1.5 –0.05 0.65± 0.15 For small current rectification 1 Features IF(AV)=100mA rectification possible 3 Fast reverse recovery time trr, optimum for high-frequency rectifica- 2 tion Low VF (forward voltage) with high rectification efficiency 0.1 to 0.3 0.4± 0.2 Absolute Maximum Ratings (Ta= 25?C) 1 : Anode Parameter Symbol Rating Unit 2 : NC JEDEC : TO-236 Reverse voltage (DC) VR 30 V 3 : Cathode EIAJ : SC-59 Mini Type Package (3-pin) Repetitive peak reverse voltage VRRM 30 V Peak forward current IFM 300 mA Marking Symbol : M3T Average forward current IF(AV) 100 mA Internal Connection Non-repetitive peak f

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