View ma788 datasheet:
POWER MOSFET, IGBT, IC, TRIACS DATABASE. Electronic Supply. INNOVATION CATALOG
Schottky Barrier Diodes (SBD) 2SK1606 MA788 Silicon epitaxial planer type +0.2 Unit : mm 2.8 –0.3 For super high-speed switching circuit +0.25 0.65± 0.15 1.5 –0.05 0.65± 0.15 For small current rectification 1 Features IF(AV)=200mA rectification possible 3 Reverse voltage VR (DC value)= 60V guaranteed 2 0.1 to 0.3 0.4± 0.2 Absolute Maximum Ratings (Ta= 25?C) 1 : Anode Symbol Parameter Rating Unit 2 : NC JEDEC : TO-236 VR Reverse voltage (DC) 60 V 3 : Cathode EIAJ : SC-59 Mini Type Package (3-pin) VRRM Repetitive peak reverse voltage 60 V IFM Peak forward current 300 mA Marking Symbol : M3V IF(AV) Average forward current 200 mA Internal Connection IFSM* Non-repetitive peak forward surge current 1 A Tj Junction temperature 125 ?C 1 Tstg – 55 to +125
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ma788 Datasheet, Design, MOSFET, Power
ma788 RoHS, Compliant, Service, Triacs, Semiconductor
ma788 Database, Innovation, IC, Electricity
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