View ma789 datasheet:

Schottky Barrier Diodes (SBD) 2SK1606 MA789 Silicon epitaxial planer type +0.2 Unit : mm 2.8 –0.3 For super high-speed switching circuit +0.25 0.65± 0.15 1.5 –0.05 0.65± 0.15 For small current rectification 1 Features IF(AV)=200mA rectification possible 3 Reverse voltage VR (DC value)= 60V guaranteed 2 0.1 to 0.3 0.4± 0.2 Absolute Maximum Ratings (Ta= 25?C) 1 : Anode Parameter Symbol Rating Unit 2 : NC JEDEC : TO-236 Reverse voltage (DC) VR 60 V 3 : Cathode EIAJ : SC-59 Mini Type Package (3-pin) Repetitive peak reverse voltage VRRM 60 V Average forward current IF(AV) 500 mA Marking Symbol : M3W Non-repetitive peak forward surge current IFSM* 2 A Internal Connection Junction temperature Tj 125 ?C Storage temperature Tstg – 55 to +125 ?C 1 * 50Hz sine wave