View mbr1100 datasheet:
POWER MOSFET, IGBT, IC, TRIACS DATABASE. Electronic Supply. INNOVATION CATALOG
Bulletin PD-20587 rev. A 03/02 MBR1100 SCHOTTKY RECTIFIER 1.0 Amp Description/Features Major Ratings and Characteristics The MBR1100 axial leaded Schottky rectifier has been opti- Characteristics MBR1100 Units mized for very low forward voltage drop, with moderate leakage. Typical applications are in switching power supplies, convert- IF(AV) Rectangular 1.0 A ers, free-wheeling diodes, and reverse battery protection. waveform Low profile, axial leaded outline VRRM 100 V High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance IFSM @ tp = 5 µs sine 200 A Very low forward voltage drop High frequency operation VF @ 1 Apk, TJ = 125°C 0.68 V Guard ring for enhanced ruggedness and long term reliability TJ range - 40 to 150 °
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mbr1100 Datasheet, Design, MOSFET, Power
mbr1100 RoHS, Compliant, Service, Triacs, Semiconductor
mbr1100 Database, Innovation, IC, Electricity
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