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POWER MOSFET, IGBT, IC, TRIACS DATABASE. Electronic Supply. INNOVATION CATALOG

mch6604

Ordering number:ENN6459 N-Channel Silicon MOSFET MCH6604 Ultrahigh-Speed Switching Applications Features Package Dimensions · Low ON resistance. unit:mm · Ultrahigh-speed swithcing. 2173 · 2.5V drive. [MCH6604] · Composite type with 2 MOSFETs contained in one package, facilitating high-density mounting. 0.3 0.15 6 5 4 1 2 3 0.65 2.0 1 : Source1 2 : Gate1 3 : Drain2 4 : Source2 5 : Gate2 6 : Drain1 Specifications SANYO : MCPH6 Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 50 V Gate-to-Source Voltage VGSS ±10 V Drain Current (DC) ID 0.25 A Drain Current (pulse) IDP PW? 10µs, duty cycle? 1% 1 A Allowable Power Dissipation PD Mounted on a ceramic board (900mm2? 0.8mm) 1unit 0.8 W Channel Temperatu

Keywords

 mch6604 Datasheet, Design, MOSFET, Power

 mch6604 RoHS, Compliant, Service, Triacs, Semiconductor

 mch6604 Database, Innovation, IC, Electricity

 

 
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