View mch6616 datasheet:

Ordering number : ENN7013 MCH6616 N-Channel Silicon MOSFET MCH6616 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON-resistance. unit : mm • Ultrahigh-speed switching. 2173A • 2.5V drive. [MCH6616] • Composite type with 2 MOSFETs contained in a single 0.3 0.15 package, facilitating high-density mounting. 4 5 6 3 2 1 1 : Source1 2 : Gate1 0.65 3 : Drain2 2.0 6 5 4 4 : Source2 5 : Gate2 6 : Drain1 SANYO : MCPH6 1 2 3 Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 20 V Gate-to-Source Voltage VGSS ±10 V Drain Current (DC) ID 1.6 A Drain Current (Pulse) IDP PW?10µs, duty cycle?1% 6.4 A Allowable Power Dissipation PD Mounted on a ceramic board (900mm2 0.8mm)1unit 0