View mhw9014r datasheet:
POWER MOSFET, IGBT, IC, TRIACS DATABASE. Electronic Supply. INNOVATION CATALOG
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MHW9014/D The RF Line MHW9014 Microwave GaAs FET Power Amplifier Designed for applications in the Personal Communication Network System (PCN). The MHW9014 was designed specifically for a digital, 1 Watt, 33.2 dBm hand–held radio. This power amplifier is capable of wide power range control, 1710–1785 MHz operates from a 6 Volt supply and requires only 1.0 mW of RF input power. RF POWER AMPLIFIER • Specified 6 Volt Characteristics: RF Input Power: 1.0 mW (0 dBm) RF Output Power: 33.2 dBm Minimum Gain: 33.2 dB Harmonics: –33 dBc Max @ 2 f0 • New Biasing and Control Techniques Providing Dynamic Range and Control Circuit Bandwidth Ideal for PCN • Low Control Current • 50 ? Input/Output Impedances CASE 420–01, ST
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mhw9014r Datasheet, Design, MOSFET, Power
mhw9014r RoHS, Compliant, Service, Triacs, Semiconductor
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