View mje171re datasheet:

Order this document MOTOROLA by MJE171/D SEMICONDUCTOR TECHNICAL DATA PNP Complementary Plastic * MJE171 Silicon Power Transistors * MJE172 . . . designed for low power audio amplifier and low current, high speed switching applications. NPN • Collector–Emitter Sustaining Voltage — * MJE181 VCEO(sus) = 60 Vdc — MJE171, MJE181 VCEO(sus) = 80 Vdc — MJE172, MJE182 * MJE182 • DC Current Gain — hFE = 30 (Min) @ IC = 0.5 Adc *Motorola Preferred Device hFE = 12 (Min) @ IC = 1.5 Adc • Current–Gain — Bandwidth Product — 3 AMPERE fT = 50 MHz (Min) @ IC = 100 mAdc POWER TRANSISTORS • Annular Construction for Low Leakages — IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII IIII III COMPLEMENTARY ICBO = 100 nA (Max) @ Rated VIIII IIII CB SILICON IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII