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POWER MOSFET, IGBT, IC, TRIACS DATABASE. Electronic Supply. INNOVATION CATALOG

mje18006

Order this document MOTOROLA by MJE18006/D SEMICONDUCTOR TECHNICAL DATA * MJE18006 Designer's? Data Sheet * MJF18006 SWITCHMODE? *Motorola Preferred Device NPN Bipolar Power Transistor For Switching Power Supply Applications POWER TRANSISTOR 6.0 AMPERES The MJE/MJF18006 have an applications specific state–of–the–art die designed 1000 VOLTS for use in 220 V line–operated Switchmode Power supplies and electronic light 40 and 100 WATTS ballasts. These high voltage/high speed transistors offer the following: • Improved Efficiency Due to Low Base Drive Requirements: — High and Flat DC Current Gain hFE — Fast Switching — No Coil Required in Base Circuit for Turn–Off (No Current Tail) • Tight Parametric Distributions are Consistent Lot–to–Lot IIIIIIIIIIIIIIIIIIIIIIII • T

Keywords

 mje18006 Datasheet, Design, MOSFET, Power

 mje18006 RoHS, Compliant, Service, Triacs, Semiconductor

 mje18006 Database, Innovation, IC, Electricity

 

 
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