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Order this document MOTOROLA by MJE18004D2/D SEMICONDUCTOR TECHNICAL DATA MJE18004D2 Designer's? Data Sheet POWER TRANSISTORS 5 AMPERES High Speed, High Gain Bipolar 1000 VOLTS NPN Power Transistor with 75 WATTS Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation Network The MJE18004D2 is state–of–art High Speed High gain BIPolar transistor (H2BIP). High dynamic characteristics and lot to lot minimum spread (±150 ns on storage time) make it ideally suitable for light ballast applications. Therefore, there is no need to guarantee an hFE window. Main features: • Low Base Drive Requirement • High Peak DC Current Gain (55 Typical) @ IC = 100 mA • Extremely Low Storage Time Min/Max Guarantees Due to the H2BIP Structure which Minimizes the Spread • In