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Order this document MOTOROLA by MJE18604D2/D SEMICONDUCTOR TECHNICAL DATA MJE18604D2 Advance Information POWER TRANSISTORS 3 AMPERES High Speed, High Gain Bipolar 1600 VOLTS NPN Power Transistor with 100 WATTS Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation Network for 1600 V Applications The MJE18604D2 is state–of–art High Speed High gain BIPolar transistor (H2BIP). Tight dynamic characteristics and lot to lot low spread (±150 ns on storage time) make it ideally suitable for light ballast applications. Therefore, there is no more a need to guarantee an hfe window. Main features: • Low Base Drive Requirement • High DC Current Gain (30 Typical) @ IC = 400 mA • Extremely Low Storage Time Min/Max Guarantees Due to the Internal Active Antisatura