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Order this document MOTOROLA by MJE18002D2/D SEMICONDUCTOR TECHNICAL DATA MJE18002D2 Advance Information POWER TRANSISTORS 2 AMPERES High Speed, High Gain Bipolar 1000 VOLTS NPN Power Transistor with 50 WATTS Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation Network The MJE18002D2 use a newly developed technology, so called H2BIP*, to design the state of art transistor dedicated to the Electronic Light Ballast and PFC** circuit. The main advantages brought by these new transistors are: • Improved Global Efficiency Due to the Low Base Drive Requirements • DC Current Gain Typically Centered at 45 • Extremely Low Storage Time Variation, Thanks to the Antisaturation Network • Easy to Use Thanks to the Integrated Collector/Emitter Diode The MOTOROLA