View moc8050rev2 datasheet:
POWER MOSFET, IGBT, IC, TRIACS DATABASE. Electronic Supply. INNOVATION CATALOG
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MOC8050/D MOC8030 [CTR = 300% Min] GlobalOptoisolator? MOC8050 6-Pin DIP Optoisolators [CTR = 500% Min] Darlington Output Motorola Preferred Devices (No Base Connection) The MOC8030 and MOC8050 devices consist of gallium arsenide infrared STYLE 3 PLASTIC emitting diodes optically coupled to monolithic silicon photodarlington detec- tors. The chip to Pin 6 base connection has been eliminated to improve output performance in high noise environments. They are best suited for use in applications susceptible to high EMI levels. • No Base Connection for Improved Noise Immunity 6 1 • High Collector–Emitter Breakdown Voltage — 80 Volts Minimum STANDARD THRU HOLE • Higher Sensitivity to Low Input Drive Current CAS
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moc8050rev2 Datasheet, Design, MOSFET, Power
moc8050rev2 RoHS, Compliant, Service, Triacs, Semiconductor
moc8050rev2 Database, Innovation, IC, Electricity
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