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MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTP3055VL/D Designer's? Data Sheet MTP3055VL TMOS V? Motorola Preferred Device Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET TMOS V is a new technology designed to achieve an on–resis- 12 AMPERES tance area product about one–half that of standard MOSFETs. This 60 VOLTS new technology more than doubles the present cell density of our RDS(on) = 0.18 OHM 50 and 60 volt TMOS devices. Just as with our TMOS E–FET designs, TMOS V is designed to withstand high energy in the TM avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls, these devices are particularly well suited for bridge