View om6514ss datasheet:

OM6514SS OM6515SS INSULATED GATE BIPOLAR TRANSISTOR (IGBT) IN A HERMETIC ISOLATED SIP PACKAGE 1000 Volt, 8 Amp, N-Channel IGBT In A Hermetic Metal Package FEATURES • Two Isolated IGBTs In A Hermetic SIP Package • High Input Impedance • Low On-Voltage • High Current Capability • Fast Turn-Off • Low Conductive Losses • Available With Free Wheeling Diodes • Available Screened To MIL-S-19500, TX, TXV And S Levels DESCRIPTION This IGBT power transistor features a high impedance insulated gate and a low on-resistance characteristic of bipolar transistors. These devices are ideally suited for motor drives, UPS converters, power supplies and resonant power converters. MAXIMUM RATINGS @ 25°C Unless Specified Otherwise q PART IC (Cont.) V(BR)CES VCE (sat) (Typ.) Tf (Typ.) qJC P