View p2n2907a datasheet:

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by P2N2907A/D Amplifier Transistor PNP Silicon P2N2907A COLLECTOR 1 2 BASE 3 EMITTER MAXIMUM RATINGS Rating Symbol Value Unit 1 2 Collector–Emitter Voltage VCEO –60 Vdc 3 Collector–Base Voltage VCBO –60 Vdc CASE 29–04, STYLE 17 Emitter–Base Voltage VEBO –5.0 Vdc TO–92 (TO–226AA) Collector Current — Continuous IC –600 mAdc Total Device Dissipation @ TA = 25°C PD 625 mW Derate above 25°C 5.0 mW/°C Total Device Dissipation @ TC = 25°C PD 1.5 Watts Derate above 25°C 12 mW/°C Operating and Storage Junction TJ, Tstg –55 to +150 °C Temperature Range THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Ambient RqJA 200 °C/W Thermal Resistance, Junction to Case RqJC 83.3 °C/W