View pbss4540z 1 datasheet:

DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D087 PBSS4540Z NPN medium power transistor Preliminary specification 1999 Aug 04 Philips Semiconductors Preliminary specification NPN medium power transistor PBSS4540Z FEATURES PINNING • High current (max. 10 A) PIN DESCRIPTION • Low voltage (max. 40 V) 1 base • Low VCEsat. 2 collector 3 emitter APPLICATIONS 4 collector • Heavy duty battery powered equipment (Automotive, Telecom and Audio/Video) such as motor and lamp drivers • VCEsat critical applications such as the latest low supply handbook, halfpage 4 voltage IC applications 2, 4 • All battery driven equipment to save battery power. 1 DESCRIPTION 3 NPN low VCEsat transistor in a SOT223 plastic package. 1 2 3 PNP complement: PBSS5540Z. Top view MA