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DISCRETE SEMICONDUCTORS DATA SHEET M3D425 PDTA114EEF PNP resistor-equipped transistor 1999 May 21 Preliminary specification Supersedes data of 1998 Nov 11 Philips Semiconductors Preliminary specification PNP resistor-equipped transistor PDTA114EEF FEATURES PINNING • Power dissipation comparable to SOT23 PIN DESCRIPTION • Built-in bias resistors R1 and R2 (typ. 10 k? each) 1 base/input • Simplification of circuit design 2 emitter/ground (+) • Reduces number of components and board space. 3 collector/output APPLICATIONS 3 handbook, halfpage • Especially suitable for space reduction in interface and 3 R1 driver circuits 1 • Inverter circuit configurations without use of external R2 resistors. 2 12 Top view MAM413 DESCRIPTION Fig.1 Simplified outline (SC-89;