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DISCRETE SEMICONDUCTORS DATA SHEET ook, halfpage M3D088 PDTB114ET PNP resistor-equipped transistor 1997 Sep 02 Objective specification Supersedes data of February 1995 File under Discrete Semiconductors, SC04 Philips Semiconductors Objective specification PNP resistor-equipped transistor PDTB114ET FEATURES • Built-in bias resistors R1 and R2 (typ. 10 k? each) 3 • Simplification of circuit design handbook, 4 columns 3 • Reduces number of components R1 and board space. 1 R2 APPLICATIONS 2 • Especially suitable for space 1 2 reduction in interface and driver Top view MAM100 circuits • Inverter circuit configurations without use of external resistors. Fig.1 Simplified outline (SOT23) and symbol. DESCRIPTION PNP resistor-equipped transistor in a MARKING SOT