View pdtc114eef 2 datasheet:

DISCRETE SEMICONDUCTORS DATA SHEET M3D425 PDTC114EEF NPN resistor-equipped transistor 1999 May 31 Product specification Supersedes data of 1998 Nov 11 Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC114EEF FEATURES • Power dissipation comparable to SOT23 • Built-in bias resistors R1 and R2 3 handbook, halfpage (typ. 10 k? each) 3 R1 • Simplification of circuit design 1 R2 • Reduces number of components and board space. 2 12 Top view MAM412 APPLICATIONS • Especially suitable for space reduction in interface and driver circuits Fig.1 Simplified outline (SC-89; SOT490) and symbol. • Inverter circuit configurations without use of external resistors. MARKING DESCRIPTION TYPE MARKING NUMBER CODE NPN resistor-equipped transist