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pdtc114es_3

DISCRETE SEMICONDUCTORS DATA SHEET M3D173 PDTC114ES NPN resistor-equipped transistor 1998 Nov 26 Product specification Supersedes data of 1998 May 18 Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC114ES FEATURES • Built-in bias resistors R1 and R2 (typ. 10 k? each) • Simplification of circuit design handbook, halfpage 2 • Reduces number of components R1 1 1 and board space. 2 R2 3 3 APPLICATIONS MAM364 • Especially suitable for space reduction in interface and driver circuits • Inverter circuit configurations without use of external resistors. Fig.1 Simplified outline (TO-92; SOT54) and symbol. DESCRIPTION NPN resistor-equipped transistor in a TO-92; SOT54 plastic package. PNP complement: PDTA114ES. 1 2 PINNING 3 MG

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