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pdtc114tt_3

DISCRETE SEMICONDUCTORS DATA SHEET ook, halfpage M3D088 PDTC114TT NPN resistor-equipped transistor 1999 Apr 16 Objective specification Supersedes data of 1998 May 19 Philips Semiconductors Objective specification NPN resistor-equipped transistor PDTC114TT FEATURES • Built-in bias resistor R1 (typ. 10 k?) • Simplification of circuit design 3 handbook, 4 columns • Reduces number of components 3 and board space. R1 1 APPLICATIONS 2 • Especially suitable for space reduction in interface and driver 1 2 circuits Top view MAM360 • Inverter circuit configurations without use of an external resistor. Fig.1 Simplified outline (SOT23) and symbol. DESCRIPTION NPN resistor-equipped transistor in a MARKING SOT23 plastic package. PNP complement: PDTA114TT. TYPE MARKING

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