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DISCRETE SEMICONDUCTORS DATA SHEET M3D173 PDTC114YE NPN resistor-equipped transistor 1999 May 18 Product specification Supersedes data of 1998 May 19 Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC114YE FEATURES PINNING • Built-in bias resistors R1 and R2 (typ. 10 k? and 47 k? PIN DESCRIPTION respectively) 1 base/input • Simplification of circuit design 2 emitter/ground • Reduces number of components and board space. 3 collector/output APPLICATIONS handbook, halfpage • Especially suitable for space reduction in interface and 3 3 R1 driver circuits 1 • Inverter circuit configurations without use of external R2 resistors. 2 12 Top view MAM346 DESCRIPTION Fig.1 Simplified outline (SC-75; SOT416) and NPN resistor-equipped t