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pdtc114yt_3

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 PDTC114YT NPN resistor-equipped transistor 1999 May 21 Product specification Supersedes data of 1998 May 19 Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC114YT FEATURES • Built-in bias resistors R1 and R2 (typ. 10 and 47 k? respectively) • Simplification of circuit design 3 • Reduces number of components and board space. 4 columns 3 R1 1 APPLICATIONS R2 • Especially suitable for space reduction in interface and 2 driver circuits 1 2 • Inverter circuit configurations without use of external Top view MAM097 resistors. DESCRIPTION NPN resistor-equipped transistor in a SOT23 plastic package. Fig.1 Simplified outline (SOT23) and symbol. PINNING PIN DESCRIPTION 1 base

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