View pdtc123et 3 datasheet:

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 PDTC123ET NPN resistor-equipped transistor 1999 May 21 Product specification Supersedes data of 1998 May 08 Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC123ET FEATURES • Built-in bias resistors R1 and R2 (typ. 2.2 k? each) • Simplification of circuit design • Reduces number of components and board space. 3 k, 4 columns 3 APPLICATIONS R1 1 • Especially suitable for space reduction in interface and R2 driver circuits 2 • Inverter circuit configurations without use of external 1 2 resistors. Top view MAM097 DESCRIPTION NPN resistor-equipped transistor in a SOT23 plastic package. PNP complement: PDTA123ET. Fig.1 Simplified outline (SOT23) and symbol. PINNING PIN DESC