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DISCRETE SEMICONDUCTORS DATA SHEET M3D425 PDTC124XEF NPN resistor-equipped transistor 1999 May 18 Preliminary specification Supersedes data of 1998 Nov 11 Philips Semiconductors Preliminary specification NPN resistor-equipped transistor PDTC124XEF FEATURES • Power dissipation comparable to SOT23 • Built-in bias resistors R1 and R2 (typ. 22 k? and 47 k? respectively) 3 handbook, halfpage • Simplification of circuit design 3 R1 • Reduces number of components and board space. 1 R2 APPLICATIONS 2 12 Top view MAM412 • Especially suitable for space reduction in interface and driver circuits • Inverter circuit configurations without use of external resistors. Fig.1 Simplified outline (SC-89; SOT490) and symbol. DESCRIPTION NPN resistor-equipped transistor encapsul