View phb80n06t 1 datasheet:

Philips Semiconductors Product specification TrenchMOS? transistor PHB80N06T Standard level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT standard level field-effect power transistor in a plastic envelope VDS Drain-source voltage 55 V suitable for surface mounting. Using ID Drain current (DC)1 75 A �trench� technology the device Ptot T

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