View php50n06lt 3 datasheet:

Philips Semiconductors Product specification TrenchMOS? transistor PHP50N06LT, PHB50N06LT, PHD50N06LT Logic level FET FEATURES SYMBOL QUICK REFERENCE DATA • ’Trench’ technology VDSS = 55 V d • Very low on-state resistance • Fast switching ID = 50 A • Stable off-state characteristics • High thermal cycling performance RDS(ON) ? 24 m? (VGS = 5 V) g • Low thermal resistance RDS(ON) ? 22 m? (VGS = 10 V) s GENERAL DESCRIPTION N-channel enhancement mode, logic level, field-effect power transistor in a plastic envelope using ’trench’ technology. The device has very low on-state resistance. It is intended for use in dc to dc converters and general purpose switching applications. The PHP50N06LT is supplied in the SOT78 (TO220AB) conventional leaded package. The PHB50N06LT is su