View phx5n50e 1 datasheet:

Philips Semiconductors Objective specification PowerMOS transistor PHX5N50E Isolated version of PHP8N50E GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT field-effect power transistor in a full pack, plastic envelope featuring high VDS Drain-source voltage 500 V avalanche energy capability, stable ID Drain current (DC) 4 A blocking voltage, fast switching and Ptot Total power dissipation 30 W high thermal cycling performance RDS(ON) Drain-source on-state resistance 0.8 ? with low thermal resistance. Intended for use in Switched Mode Power Supplies (SMPS), motor control circuits and general purpose switching applications. PINNING - SOT186A PIN CONFIGURATION SYMBOL PIN DESCRIPTION d case 1 gate 2 drain g 3 source case iso