View pmbt5550 3 datasheet:

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 PMBT5550 NPN high-voltage transistor 1999 Apr 15 Product specification Supersedes data of 1997 Jun 16 Philips Semiconductors Product specification NPN high-voltage transistor PMBT5550 FEATURES PINNING � Low current (max. 300 mA) PIN DESCRIPTION � Low voltage (max. 140 V). 1 base 2 emitter APPLICATIONS 3 collector � Telephony. DESCRIPTION handbook, halfpage 3 NPN high-voltage transistor in a SOT23 plastic package. 3 PNP complement: PMBT5401. 1 MARKING 2 TYPE NUMBER MARKING CODE(1) 1 2 PMBT5550 ?1F Top view MAM255 Note 1. ? = p : Made in Hong Kong. Fig.1 Simplified outline (SOT23) and symbol. ? = t : Made in Malaysia. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134)