View pmbt5551 3 datasheet:

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 PMBT5551 NPN high-voltage transistor 1999 Apr 15 Product specification Supersedes data of 1997 Jul 02 Philips Semiconductors Product specification NPN high-voltage transistor PMBT5551 FEATURES PINNING � Low current (max. 300 mA) PIN DESCRIPTION � High voltage (max. 160 V). 1 base 2 emitter APPLICATIONS 3 collector � General purpose � Telephony. handbook, halfpage DESCRIPTION 3 3 NPN high-voltage transistor in a SOT23 plastic package. PNP complement: PMBT5401. 1 MARKING 2 1 2 TYPE NUMBER MARKING CODE(1) Top view MAM255 PMBT5551 ?G1 Note Fig.1 Simplified outline (SOT23) and symbol. 1. ? = p : Made in Hong Kong. ? = t : Made in Malaysia. LIMITING VALUES In accordance with the Absolute Maximum Rati