View pmst5550 5551 4 datasheet:
POWER MOSFET, IGBT, IC, TRIACS DATABASE. Electronic Supply. INNOVATION CATALOG
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D187 PMST5550; PMST5551 NPN high-voltage transistors 1999 Apr 29 Product specification Supersedes data of 1997 May 20 Philips Semiconductors Product specification NPN high-voltage transistors PMST5550; PMST5551 FEATURES PINNING � Low current (max. 300 mA) PIN DESCRIPTION � High voltage (max. 160 V). 1 base 2 emitter APPLICATIONS 3 collector � Switching and amplification in high voltage applications such as telephony. DESCRIPTION 3 handbook, halfpage NPN high-voltage transistor in a SOT323 plastic package. 3 PNP complement: PMST5401. 1 MARKING 2 TYPE NUMBER MARKING CODE(1) 1 2 PMST5550 ?1F Top view MAM062 PMST5551 ?G3 Note 1. ? = - : Made in Hong Kong. Fig.1 Simplified outline (SOT323) and symbol. ? =
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pmst5550 5551 4 Datasheet, Design, MOSFET, Power
pmst5550 5551 4 RoHS, Compliant, Service, Triacs, Semiconductor
pmst5550 5551 4 Database, Innovation, IC, Electricity
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