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View psmn015-100 series hg 3 datasheet:

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psmn015-100_series_hg_3

DISCRETE SEMICONDUCTORS DATA SHEET PSMN015-100B; PSMN015-100P N-channel TrenchMOS(TM) transistor Product specification August 1999 Philips Semiconductors Product specification N-channel TrenchMOS(TM) transistor PSMN015-100B; PSMN015-100P FEATURES SYMBOL QUICK REFERENCE DATA • ’Trench’ technology d • Very low on-state resistance VDSS = 100 V • Fast switching • Low thermal resistance ID = 75 A g RDS(ON) ? 15 m? s GENERAL DESCRIPTION SiliconMAX products use the latest Philips Trench technology to achieve the lowest possible on-state resistance in each package at each voltage rating. Applications:- • d.c. to d.c. converters • switched mode power supplies The PSMN015-100P is supplied in the SOT78 (TO220AB) conventional leaded package. The PSMN015-100B is supplied in the

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