View psmn020-150w 2 datasheet:
POWER MOSFET, IGBT, IC, TRIACS DATABASE. Electronic Supply. INNOVATION CATALOG
Philips Semiconductors Product specification N-channel TrenchMOS? transistor PSMN020-150W FEATURES SYMBOL QUICK REFERENCE DATA Trench technology d Very low on-state resistance VDSS = 150 V Fast switching Low thermal resistance ID = 73 A g RDS(ON) ? 20 m? s GENERAL DESCRIPTION PINNING SOT429 (TO247) SiliconMAX products use the latest PIN DESCRIPTION Philips Trench technology to achieve the lowest possible 1 gate on-state resistance in each package at each voltage rating. 2 drain Applications:- 3 source d.c. to d.c. converters 2 switched mode power supplies tab drain 1 3 The PSMN020-150W is supplied in the SOT429 (TO247) conventional leaded package. LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMET
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psmn020-150w 2 Datasheet, Design, MOSFET, Power
psmn020-150w 2 RoHS, Compliant, Service, Triacs, Semiconductor
psmn020-150w 2 Database, Innovation, IC, Electricity
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