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psmn063-150d_2

Philips Semiconductors Product specification N-channel TrenchMOS? transistor PSMN063-150D FEATURES SYMBOL QUICK REFERENCE DATA • ’Trench’ technology d • Very low on-state resistance VDSS = 150 V • Fast switching • Low thermal resistance ID = 29 A g RDS(ON) ? 63 m? s GENERAL DESCRIPTION PINNING SOT428 (Dpak) SiliconMAX products use the latest PIN DESCRIPTION tab Philips Trench technology to achieve the lowest possible 1 gate on-state resistance in each package at each voltage rating. 2 drain1 Applications:- 3 source 2 • d.c. to d.c. converters • switched mode power supplies tab drain 1 3 The PSMN063-150D is supplied in the SOT428 (Dpak) surface mounting package. LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAM

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 psmn063-150d 2 Datasheet, Design, MOSFET, Power

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 psmn063-150d 2 Database, Innovation, IC, Electricity

 

 
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