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View psmn070-200 series hg 3 datasheet:

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psmn070-200_series_hg_3

DISCRETE SEMICONDUCTORS DATA SHEET PSMN070-200B; PSMN070-200P N-channel TrenchMOS(TM) transistor Product specification August 1999 Philips Semiconductors Product specification N-channel TrenchMOS(TM) transistor PSMN070-200B; PSMN070-200P FEATURES SYMBOL QUICK REFERENCE DATA • ’Trench’ technology d • Very low on-state resistance VDSS = 200 V • Fast switching • Low thermal resistance ID = 35 A g RDS(ON) ? 70 m? s GENERAL DESCRIPTION SiliconMAX products use the latest Philips Trench technology to achieve the lowest possible on-state resistance in each package at each voltage rating. Applications:- • d.c. to d.c. converters • switched mode power supplies The PSMN070-200P is supplied in the SOT78 (TO220AB) conventional leaded package. The PSMN070-200B is supplied in the

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