View psmn130-200d hg 3 datasheet:

DISCRETE SEMICONDUCTORS DATA SHEET PSMN130-200D N-channel TrenchMOS(TM) transistor Product specification August 1999 Philips Semiconductors Product specification N-channel TrenchMOS(TM) transistor PSMN130-200D FEATURES SYMBOL QUICK REFERENCE DATA • ’Trench’ technology d • Very low on-state resistance VDSS = 200 V • Fast switching • Low thermal resistance ID = 20 A g RDS(ON) ? 130 m? s GENERAL DESCRIPTION PINNING SOT428 (DPAK) SiliconMAX products use the latest PIN DESCRIPTION tab Philips Trench technology to achieve the lowest possible 1 gate on-state resistance in each package at each voltage rating. 2 drain1 Applications:- 3 source 2 • d.c. to d.c. converters • switched mode power supplies tab drain 1 3 The PSMN130-200D is supplied in the SOT428 (Dpak) surfa