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DISCRETE SEMICONDUCTORS DATA SHEET ge MBD128 PUMH10 NPN resistor-equipped transistors Product specification 2000 Aug 01 Philips Semiconductors Product specification NPN resistor-equipped transistors PUMH10 FEATURES • Transistors with built-in bias resistors R1 and R2 (typ. 2.2 and 47 k?) 6 5 4 • No mutual interference between the transistors handbook, halfpage • Reduces number of components and board space 6 5 4 R1 R2 • Simplification of circuit design. TR2 TR1 APPLICATION R2 R1 1 2 3 • Especially suitable for space reduction in portable equipment Top view MAM438 1 2 3 • Inverter circuit configurations without use of external resistors. Fig.1 Simplified outline (SC88) and symbol. DESCRIPTION NPN resistor-equipped transistors in an SC88 (SOT363) plastic packa