View rn1101-1106 xa-b-c-d-e-f sot416 datasheet:
POWER MOSFET, IGBT, IC, TRIACS DATABASE. Electronic Supply. INNOVATION CATALOG
RN1101?RN1106 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1101,RN1102,RN1103 RN1104,RN1105,RN1106 Switching, Inverter Circuit, Interface Circuit Unit: mm And Driver Circuit Applications With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary to RN2101~RN2106 Equivalent Circuit and Bias Resister Values Type No. R1 (k?) R2 (k?) RN1101 4.7 4.7 RN1102 10 10 RN1103 22 22 RN1104 47 47 RN1105 2.2 47 RN1106 4.7 47 JEDEC ? EIAJ ? TOSHIBA 2-2H1A Weight: 2.4mg Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Collector-base voltage VCBO 50 V RN1101~1106 Collector-emitter voltage VCEO 50 V RN1101~1104 10 Emitter-base voltage VEBO V RN1105, 1106 5 Colle
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rn1101-1106 xa-b-c-d-e-f sot416 Datasheet, Design, MOSFET, Power
rn1101-1106 xa-b-c-d-e-f sot416 RoHS, Compliant, Service, Triacs, Semiconductor
rn1101-1106 xa-b-c-d-e-f sot416 Database, Innovation, IC, Electricity
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