All Transistors. Datasheet

 

View rn1101f-1106f xa-b-c-d-e-f sot490 datasheet:

POWER MOSFET, IGBT, IC, TRIACS DATABASE. Electronic Supply. INNOVATION CATALOG

rn1101f-1106f__xa-b-c-d-e-f_sot490

RN1101F?RN1106F TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1101F,RN1102F,RN1103F RN1104F,RN1105F,RN1106F Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Unit in mm With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary to RN2101F~RN2106F Equivalent Circuit And Bias Resister Values Type No. R1 (k?) R2 (k?) RN1101F 4.7 4.7 RN1102F 10 10 RN1103F 22 22 RN1104F 47 47 RN1105F 2.2 47 RN1106F 4.7 47 JEDEC ? EIAJ ? 2-2H1A TOSHIBA Maximum Ratings (Ta = 25°C) Weight: 2.3 mg Characteristic Symbol Rating Unit Collector-base voltage VCBO 50 V RN1101F~1106F Collector-emitter voltage VCEO 50 V RN1101F~1104F 10 Emitter-base voltage VEBO V

Keywords

 rn1101f-1106f xa-b-c-d-e-f sot490 Datasheet, Design, MOSFET, Power

 rn1101f-1106f xa-b-c-d-e-f sot490 RoHS, Compliant, Service, Triacs, Semiconductor

 rn1101f-1106f xa-b-c-d-e-f sot490 Database, Innovation, IC, Electricity

 

 
Back to Top

 


 
.