View rn1101ft-1106ft xa-b-c-d-e-f sot623 datasheet:

RN1101FT~RN1106FT TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN1101FT, RN1102FT, RN1103FT RN1104FT, RN1105FT, RN1106FT Switching, Inverter Circuit, Interface Circuit and Unit: mm Driver Circuit Applications • High-density mount is possible because of devices housed in very thin TESM packages. • Incorporating a bias resistor into a transistor reduces parts count. Reducing the parts count enable the manufacture of ever more compact equipment and save assembly cost. • Wide range of resistor values are available to use in various circuit designs. • Complementary to RN2101FT~RN2106FT Equivalent Circuit and Bias Resistor Values C Type No. R1 (k?) R2 (k?) RN1101FT 4.7 4.7 R1 B RN1102FT 10 10 JEDEC ? R