View rn1107-1108-1109 xh xi xj sot416 datasheet:

RN1107~1109 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1107,RN1108,RN1109 Unit: mm Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications With built-in bias resistors. Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary to RN2107~2109 Equivalent Circuit and Bias Resistor Values Type No. R1 (k?) R2 (k?) RN1107 10 47 RN1108 22 47 RN1109 47 22 JEDEC ? EIAJ ? TOSHIBA 2-2H1A Weight: 2.4mg Maximum Ratings (Ta = 25° °C) ° ° Characteristic Symbol Rating Unit Collector-base voltage RN1107~1109 VCBO 50 V Collector-emitter voltage RN1107~1109 VCEO 50 V RN1107 6 Emitter-base voltage RN1108 VEBO 7 V RN1109 15 Collector current RN1107~1109 Ic 100 mA Collector power