View rn1110 rn1111 sot416 datasheet:

RN1110,RN1111 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1110,RN1111 Unit: mm Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary to RN2110~RN2111 Equivalent Circuit Maximum Ratings (Ta = 25°C) JEDEC ? EIAJ ? Characterisstic Symbol Rating Unit TOSHIBA 2-2H1A Weight: 2.4mg Collector-base voltage VCBO 50 V Collector-emitter voltage VCEO 50 V Emitter-base voltage VEBO 5 V Collector current Ic 100 mA Collector power dissipation Pc 100 mW Junction temperature Tj 150 °C Storage temperature range Tstg -55~150 °C Electrical Characteristics (Ta = 25°C) Test Characteristic Symbol Test Cond