View rn1110f rn1111f sot490 datasheet:

RN1110F,RN1111F TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1110F,RN1111F Switching, Inverter Circuit, Interface Circuit Unit: mm And Driver Circuit Applications With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary to RN2110F, RN2111F Equivalent Circuit Maximum Ratings (Ta = 25°C) JEDEC ? Characterisstic Symbol Rating Unit EIAJ ? TOSHIBA 2-2HA1A Collector-base voltage VCBO 50 V Collector-emitter voltage VCEO 50 V Emitter-base voltage VEBO 5 V Collector current Ic 100 mA Collector power dissipation Pc 100 mW Junction temperature Tj 150 °C Storage temperature range Tstg -55~150 °C Electrical Characteristics (Ta = 25°C) Test Characteristic Symbol Test Condition M