View rn1110ft rn1111ft datasheet:

RN1110FT,RN1111FT TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN1110FT,RN1111FT Switching, Inverter Circuit, Interface Circuit and Unit: mm Driver Circuit Applications • High-density mount is possible because of devices housed in very thin TESM packages. • Incorporating a bias resistor into a transistor reduces parts count. Reducing the parts count enable the manufacture of ever more compact equipment and save assembly cost. • Wide range of resistor values are available to use in various circuit designs. • Complementary to RN2110FT, RN2111FT Equivalent Circuit and Bias Resistor Values C R1 B JEDEC ? JEITA ? E TOSHIBA 2-1B1A Weight: 0.0022 g (typ.) Maximum Ratings (Ta = 25°C) Characteristics S