View rn1301-rn1306 datasheet:
POWER MOSFET, IGBT, IC, TRIACS DATABASE. Electronic Supply. INNOVATION CATALOG
RN1301~RN1306 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1301,RN1302,RN1303 RN1304,RN1305,RN1306 Unit: mm Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications With built-in bias resistors. Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary to RN2301~RN2306 Equivalent Circuit and Bias Resistor Values Type No. R1 (k?) R2 (k?) RN1301 4.7 4.7 RN1302 10 10 RN1303 22 22 RN1304 47 47 RN1305 2.2 47 JEDEC ? RN1306 4.7 47 EIAJ SC-70 TOSHIBA 2-2E1A Weight: 0.006g Maximum Ratings (Ta = 25° °C) ° ° Characteristic Symbol Rating Unit Collector-base voltage VCBO 50 V RN1301~1306 Collector-emitter voltage VCEO 50 V RN1301~1304 10 Emitter-base voltage VEBO V RN1305, 13
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rn1301-rn1306 Datasheet, Design, MOSFET, Power
rn1301-rn1306 RoHS, Compliant, Service, Triacs, Semiconductor
rn1301-rn1306 Database, Innovation, IC, Electricity
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