View rn1307-rn1309 datasheet:

RN1307~RN1309 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1307,RN1308,RN1309 Unit: mm Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications With built-in bias resistors. Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary to RN2307~RN2309 Equivalent Circuit and Bias Resistor Values Type No. R1 (k?) R2 (k?) RN2207 10 47 RN2208 22 47 RN2209 47 22 JEDEC ? EIAJ SC-70 TOSHIBA 2-2E1A Maximum Ratings (Ta = 25° Weight: 0.006g °C) ° ° Characteristic Symbol Rating Unit Collector-base voltage VCBO 50 V Collector-emitter voltage VCEO 50 V RN1307 6 Emitter-base voltage RN1308 VEBO 7 V RN1309 15 Collector current Ic 100 mA Collector power dissipation Pc 100 mW Junctio