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View rn1901-1906 xa-b-c-d-e-f sot363 datasheet:

POWER MOSFET, IGBT, IC, TRIACS DATABASE. Electronic Supply. INNOVATION CATALOG

rn1901-1906___xa-b-c-d-e-f___sot363

RN1901~RN1906 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1901,RN1902,RN1903 RN1904,RN1905,RN1906 Unit: mm Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Including two devices in US6 (ultra super mini type with 6 leads) With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary to RN2901~RN2906 Equivalent Circuit and Bias Resistor Values Type No. R1 (k?) R2 (k?) RN1901 4.7 4.7 RN1902 10 10 RN1903 22 22 JEDEC ? RN1904 47 47 EIAJ ? RN1905 2.2 47 TOSHIBA 2-2J1A RN1906 4.7 47 Weight: 6.8mg Equivalent Circuit (Top View) Maximum Ratings (Ta = 25° °C) (Q1, Q2 Common) ° ° Characteristic Symbol Rating Unit Collector-base voltage VCBO

Keywords

 rn1901-1906 xa-b-c-d-e-f sot363 Datasheet, Design, MOSFET, Power

 rn1901-1906 xa-b-c-d-e-f sot363 RoHS, Compliant, Service, Triacs, Semiconductor

 rn1901-1906 xa-b-c-d-e-f sot363 Database, Innovation, IC, Electricity

 

 
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