View rn1907-rn1909 datasheet:
POWER MOSFET, IGBT, IC, TRIACS DATABASE. Electronic Supply. INNOVATION CATALOG
RN1907~RN1909 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1907,RN1908,RN1909 Unit: mm Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Including two devices in US6 (ultra super mini type with 6 leads) With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary to RN2907~RN2909 Equivalent Circuit and Bias Resistor Values Type No. R1 (k?) R2 (k?) RN1907 10 47 RN1908 22 47 RN1909 47 22 JEDEC ? EIAJ ? TOSHIBA 2-2J1A Weight: 6.8mg Equivalent Circuit (Top View) Maximum Ratings (Ta = 25° °C) (Q1, Q2 Common) ° ° Characteristic Symbol Rating Unit Collector-base voltage VCBO 50 V RN1907~1909 Collector-emitter voltage VCEO 50 V RN1907 6
Keywords
rn1907-rn1909 Datasheet, Design, MOSFET, Power
rn1907-rn1909 RoHS, Compliant, Service, Triacs, Semiconductor
rn1907-rn1909 Database, Innovation, IC, Electricity
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